Analog Switch Quad SPST 16-Pin TSSOP, DG212BDQ, Vishay

The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG211B and DG212B can handle up to ± 22 V, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. The DG211B is a normally closed switch and the DG212B is a normally open switch. (see Truth Table.)

  • ± 22 V supply voltage rating
  • TTL and CMOS compatible logic
  • Low on-resistance – RDS(on): 50 ?
  • Low leakage – ID(on): 20 pA
  • Single supply operation possible
  • Extended temperature range
  • Fast switching – tON: 120 ns
  • Low charge injection – Q: 1 pC

Характеристики

Бренд

Supplier_package

TSSOP

Number_of_outputs_per_chip

4

Operating_supply_current

±0.01@±15V mA

Operating_supply_voltage

±12, ±15, ±18 V, ±22, ±4.5, ±5, ±9, 25, 4.5

Operating_temp

-40 to 85 °C

Output_signal_type

Single

Pin_count

16

Polarity

Non-Inverting

Power_supply_type

Dual, Single

Product_dimensions

5.08 x 4.4 x 0.92 mm

Schedule_b

8542390000

Screening_level

Extended

Specifications

http://www.vishay.com/docs/70040/70040.pdf

Number_of_inputs_per_chip

4

Chip_enable_signals

Yes

Number_of_channels_per_chip

4

Конфигурация

Quad SPST

Eccn

EAR99

Htsn

8542390001

Input_signal_type

Single

Kind

Analog Switch

Lead_finish

Tin/Lead

Mounting

Surface Mount

Max_high_lev_output_current

100 mA

Max_on_resistance

160@12V Ohm

Max_on_resistance_range

150 to 250 Ohm

Max_power_dissipation

640 mW

Max_processing_temp

240

Max_turn_on_time

300@±15V ns

Артикул: DG212BDQ

Описание

The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in Vishay Siliconix’ proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG211B and DG212B can handle up to ± 22 V, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. The DG211B is a normally closed switch and the DG212B is a normally open switch. (see Truth Table.)

  • ± 22 V supply voltage rating
  • TTL and CMOS compatible logic
  • Low on-resistance – RDS(on): 50 ?
  • Low leakage – ID(on): 20 pA
  • Single supply operation possible
  • Extended temperature range
  • Fast switching – tON: 120 ns
  • Low charge injection – Q: 1 pC

Детали

Бренд

Supplier_package

TSSOP

Number_of_outputs_per_chip

4

Operating_supply_current

±0.01@±15V mA

Operating_supply_voltage

±12, ±15, ±18 V, ±22, ±4.5, ±5, ±9, 25, 4.5

Operating_temp

-40 to 85 °C

Output_signal_type

Single

Pin_count

16

Polarity

Non-Inverting

Power_supply_type

Dual, Single

Product_dimensions

5.08 x 4.4 x 0.92 mm

Schedule_b

8542390000

Screening_level

Extended

Specifications

http://www.vishay.com/docs/70040/70040.pdf

Number_of_inputs_per_chip

4

Chip_enable_signals

Yes

Number_of_channels_per_chip

4

Конфигурация

Quad SPST

Eccn

EAR99

Htsn

8542390001

Input_signal_type

Single

Kind

Analog Switch

Lead_finish

Tin/Lead

Mounting

Surface Mount

Max_high_lev_output_current

100 mA

Max_on_resistance

160@12V Ohm

Max_on_resistance_range

150 to 250 Ohm

Max_power_dissipation

640 mW

Max_processing_temp

240

Max_turn_on_time

300@±15V ns