Описание
The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a +2.7 V to +12 V single supply or from ± 2.7 V to ± 5 V, dual supplies. The DG636 is fully specified at +3 V, +5 V and ± 5 V. All control logic inputs have guaranteed 2 V logic high limits when operating from +5 V or ± 5 V supplies and 1.4 V when operating from a 3 V supply. The DG636 switches conduct equally well in both directions and offer rail to rail analog signal handling. < 1 pC low charge injection, coupled with very low switch capacitance and leakage current makes this product ideal for use in precision instrumentation applications. Operating temperature range is specified from -40 °C to +125 °C. The DG636 is available in 14 lead TSSOP and the space saving 1.8 mm x 2.6 mm miniQFN package.
- Ultra low charge injection (± 0.5 pC, typ. over the full analog signal range)
- Leakage current < 0.5 nA max. at 85 °C (for DG636EQ-T1-E3)
- Low switch capacitance (Csoff, 2 pF typ.)
- Low RDS(on) – 115 O max.
- Fully specified with single supply operation at 3 V, 5 V and dual supplies at ± 5 V
- Low voltage, 2.5 V CMOS/TTL compatible
- 600 MHz, – 3 dB bandwidth
- Excellent isolation and crosstalk performance (typ. > -60 dB at 10 MHz)
- Fully specified from -40 °C to +85 °C and -40 °C to +125 °C
- 14 pin TSSOP and 16 pin miniQFN package (1.8 mm x 2.6 mm)
