Analog Switch Quad SPST 16-Pin SOIC N T/R, DG444BDY-T1-E3, Vishay

The DG444B is monolithic quad analog switches designed to provide high speed, low error switching of analog and audio signals. The DG444B is upgrades to the original DG444, DG445.Combing low on-resistance (45 O, typ.) with high speed (tON 120 ns, typ.), the DG444B is ideally suited for Data Acquisition, Communication Systems, Automatic Test Equipment, or Medical Instrumentation. Charge injection has been minimized on the drain for use in sample-and-hold circuits.The DG444B is built using Vishay Siliconix’s high-voltage silicon-gate process. An epitaxial layer prevents latchup.When on, each switch conducts equally well in both directions and blocks input voltages to the supply levels when off.

  • Low On-Resistance: 45 W
  • Low Power Consumption: 1 mW
  • Fast Switching Action – tON: 120 ns
  • Low Charge Injection
  • TTL/CMOS-Compatible Logic

Характеристики

Бренд

Operating_temp

-40 to 85 °C

Output_signal_type

Single

Pin_count

16

Polarity

Non-Inverting

Power_supply_type

Dual, Single

Product_dimensions

10 x 4 x 1.55 mm

Schedule_b

8542390000

Specifications

http://www.vishay.com/docs/72626/72626.pdf

Number_of_outputs_per_chip

4

Supplier_package

SOIC N

Max_on_resistance_range

150 to 250 Ohm

Operating_supply_current

±0.001@±15V mA

Operating_supply_voltage

±12, ±15, ±18 V, ±22, ±5, ±7, ±9, 13, 36

Number_of_inputs_per_chip

4

Chip_enable_signals

Yes

Конфигурация

Quad SPST

Eccn

EAR99

Htsn

8542390001

Input_signal_type

Single

Kind

Analog Switch

Lead_finish

Matte Tin

Max_high_lev_output_current

30 mA

Max_on_resistance

160@12V Ohm

Max_power_dissipation

640 mW

Max_processing_temp

260

Max_turn_on_time

300@±15V ns

Mounting

Surface Mount

Msl_level

1

Number_of_channels_per_chip

4

Артикул: DG444BDY-T1-E3

Описание

The DG444B is monolithic quad analog switches designed to provide high speed, low error switching of analog and audio signals. The DG444B is upgrades to the original DG444, DG445.Combing low on-resistance (45 O, typ.) with high speed (tON 120 ns, typ.), the DG444B is ideally suited for Data Acquisition, Communication Systems, Automatic Test Equipment, or Medical Instrumentation. Charge injection has been minimized on the drain for use in sample-and-hold circuits.The DG444B is built using Vishay Siliconix’s high-voltage silicon-gate process. An epitaxial layer prevents latchup.When on, each switch conducts equally well in both directions and blocks input voltages to the supply levels when off.

  • Low On-Resistance: 45 W
  • Low Power Consumption: 1 mW
  • Fast Switching Action – tON: 120 ns
  • Low Charge Injection
  • TTL/CMOS-Compatible Logic

Детали

Бренд

Operating_temp

-40 to 85 °C

Output_signal_type

Single

Pin_count

16

Polarity

Non-Inverting

Power_supply_type

Dual, Single

Product_dimensions

10 x 4 x 1.55 mm

Schedule_b

8542390000

Specifications

http://www.vishay.com/docs/72626/72626.pdf

Number_of_outputs_per_chip

4

Supplier_package

SOIC N

Max_on_resistance_range

150 to 250 Ohm

Operating_supply_current

±0.001@±15V mA

Operating_supply_voltage

±12, ±15, ±18 V, ±22, ±5, ±7, ±9, 13, 36

Number_of_inputs_per_chip

4

Chip_enable_signals

Yes

Конфигурация

Quad SPST

Eccn

EAR99

Htsn

8542390001

Input_signal_type

Single

Kind

Analog Switch

Lead_finish

Matte Tin

Max_high_lev_output_current

30 mA

Max_on_resistance

160@12V Ohm

Max_power_dissipation

640 mW

Max_processing_temp

260

Max_turn_on_time

300@±15V ns

Mounting

Surface Mount

Msl_level

1

Number_of_channels_per_chip

4