Описание
The DG303B family of monolithic CMOS switches feature three switch configuration options (SPST, SPDT, and DPST) for precision applications in communications, instrumentation and process control, where low leakage switching combined with low power consumption are required. Designed on the Siliconix PLUS-40 CMOS process, these switches are latch-up proof, and are designed to block up to 30 V peak-to-peak when off. An epitaxial layer prevents latchup. In the on condition the switches conduct equally well in both directions (with no offset voltage) and minimize error conditions with their low on-resistance. Featuring low power consumption (3.5 mW typ.) these switches are ideal for battery powered applications, without sacrificing switching speed. Designed for break-before-make switching action, these devices are CMOS and quasi TTL compatible. Single supply operation is allowed by connecting the V- rail to 0 V.
- Analog signal range: ± 15 V
- Fast switching – tON: 150 ns
- Low on-resistance – RDS(on): 30 ?
- Single supply operation
- Latch-up proof
- CMOS compatible
