Описание
18/20/28-Pin Enhanced Flash Microcontrollers with nanoWatt Technology
- 100,000 erase/write cycles Enhanced Flash program memory typical
- 1,000,000 typical erase/write cycles EEPROM data memory typical
- EEPROM Data Retention: > 40 years
- In-Circuit Serial Programming™ (ICSP™) via two pins
- Processor read/write access to program memory
- Low-Voltage Programming
- In-Circuit Debugging via two pins
- Extended Watchdog Timer (WDT): – Programmable period from 1 ms to 268s
- Wide operating voltage range: 2.0V to 5.5V
