Description
High-pin count, general-purpose MCU with built-in A/D and D/A converters,serial interface, sub-clock, etc. Maximum oscillation frequency is 16.8MHz.Comes in a 64-pin package. Available in Flash memory and Mask ROM versions.This is pin-compatible and software compatible with 3803H Group Flash memoryand Mask ROM versions.
- Basic machine-language instructions: 71
- Minimum instruction execution time: 0.24 µs (at 16.8 MHz oscillationfrequency)
- Memory size
- ROM: 16 K to 60 K bytes
- RAM: 640 to 2048 bytes
- Programmable input/output ports: 56
- Software pull-up resistors: Built-in
- Interrupts: 21 sources, 16 vectors (external 8, internal 12, software1)
- Timers: 16-bit × 1, 8-bit × 4 (with 8-bit prescaler)
- Watchdog timer: 16-bit × 1
- Serial Interface: 8-bit × 2 (UART or Clock-synchronized), 8-bit × 1(Clock-synchronized)
- PWM: 8-bit × 1 (with 8-bit prescaler)
- A/D converter: 10-bit × 16 channels (8-bit reading enabled)
- D/A converter: 8-bit × 2 channels
- LED direct drive port: 8
- Clock generating circuit: Built-in 2 circuits (connect to external ceramicresonator or quartz-crystal oscillator)
- Power source voltage
- In high-speed mode
- At 16.8 MHz oscillation frequency: 4.5 to 5.5 V
- At 12.5 MHz oscillation frequency: 4.0 to 5.5 V
- At 8.4 MHz oscillation frequency: 2.7 to 5.5 V
- At 4.2 MHz oscillation frequency: 2.2 to 5.5 V (only Mask Rom Version)
- At 2.1 MHz oscillation frequency: 2.0 to 5.5 V (only Mask Rom Version)
- In middle-speed mode
- At 16.8 MHz oscillation frequency: 4.5 to 5.5 V
- At 12.5 MHz oscillation frequency: 2.7 to 5.5 V
- At 8.4 MHz oscillation frequency: 2.2 to 5.5 V (only Mask Rom Version)
- At 6.3 MHz oscillation frequency: 1.8 to 5.5 V (only Mask Rom Version)
- In low-speed mode
- At 32 kHz oscillation frequency: 1.8 to 5.5 V (for Flash Memory Version 2.7to 5.5 V)
- Power dissipation
- In high-speed mode
- TBD mW (typ.) (at 16.8 MHz oscillation frequency, at 5 V power sourcevoltage) (Mask Rom Version)
- TBD mW (typ.) (at 16.8 MHz oscillation frequency, at 5 V power sourcevoltage) (Flash Memory Version)
- In low-speed mode
- TBD µW (typ.) (at 32 kHz oscillation frequency, at 3 V power sourcevoltage) (Mask Rom Version)
- TBD µW (typ.) (at 32 kHz oscillation frequency, at 3 V power sourcevoltage) (Flash Memory Version)
- Operating temperature range: –20 to 85 degrees C
- Packages
- SP: PRDP0064BA-A (64P4B): 64-pin 750 mil SDIP
- HP: PLQP0064KB-A (64P6Q-A): 64-pin 10 × 10 mm LQFP
- KP: PLQP0064GA-A (64P6U-A): 64-pin 14 × 14 mm LQFP
- WG: PTLG0064JA-A (64F0G): 64-pin 6 × 6 mm FLGA
- Flash memory mode
- Power source voltage: Vcc = 2.7 to 5.5 V
- Program/Erase voltage: Vcc = 2.7 to 5.5 V
- Programming method: Programming in unit of byte
- Erasing method: Block erasing
- Program/Erase control by software command
- Number of times for programming/erasing: 100
